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PhD Studentship - Memristor-CMOS Neural Interfaces

Centre for Electronics Frontiers

Location:  Highfield Campus
Closing Date:  Tuesday 31 August 2021
Reference:  1373821PN

Supervisory Team:    Dr Shiwei Wang, Prof Themis Prodromakis

Project description

Ultra-low-power integrated circuits are playing a critical role in the advancement of brain-machine interface technologies today. They empower CMOS active neural probes and microelectrode arrays that have made significant impacts on brain research, clinical neuroscience, and neural engineering applications. With the technology proliferation, the next generation of neuroelectronic devices that incorporate high-channel-count neural recording, in-situ data processing, and closed-loop neuromodulation in a fully implantable system are essential to facilitate deeper understanding and engineering with the brain. This requires neural interface circuits with significantly better scalability, resilience, and computational efficiency than what has been achieved with conventional CMOS technologies. 

With memristors emerging as scalable and power-efficient computing devices, the PhD candidate will address the above challenges by developing novel memristor-CMOS integrated circuits for neural interfacing. The candidate will develop new circuit ideas, design and validate the prototype integrated circuits (IC), and build the neuroelectronic systems and test them in our bioelectronic labs. 

The project will be conducted at the Centre for Electronics Frontiers (CEF) at the University of Southampton. CEF is a dynamic interdisciplinary Centre that delivers novel solutions for advanced sensory systems, energy technologies and unconventional computing architectures. Our team encompasses diverse expertise ranging from materials process development to electronic devices, circuits, and systems. This knowledge combined with our state-of-art facilities and strong collaborations with industry enables us to offer unique solutions to real-world problems.

At CEF, the candidate will have access to the cutting-edge memristor technologies developed in-house in addition to the full CMOS IC design platforms and will thus be in a unique position to explore and validate the new design concepts. The PhD student will learn industry standard IC design methodologies and will have the opportunity to join a multi-disciplinary research team and to be trained and work in the world-class facilities of the Zepler Institute for Photonics and Nanoelectronics. The candidate for this project will also have opportunities for placement and internships with our collaborators from industry and other leading research institutions. 

If you wish to discuss any details of the project informally, please contact Dr Shiwei Wang, Centre for Electronics Frontiers, Email:

Entry Requirements

A very good undergraduate degree (at least a UK 2:1 honours degree, or its international equivalent) or an MEng/MSc (or equivalent, or near completion) with first class honours or distinction in Electronic Engineering or a closely related subject such as Biomedical Engineering. We welcome applications from candidates with a strong background in analogue & mixed-signal circuit design. Knowledge on neural electrophysiology and prior design experience with biomedical circuits are highly desired. Industrial IC design or successful tape-out experiences will be a strong plus.

Closing date: applications should be received no later than 31 August 2021 for standard admissions, but later applications may be considered depending on the funds remaining in place.

Funding: For UK students, Tuition Fees and a stipend of £15,609 tax-free per annum for up to 3.5 years. 

How To Apply

Applications should be made online. Select programme type (Research), 2021/22, Faculty of Physical Sciences and Engineering, next page select “PhD  Nanoelectronics (Full time) 

Applications should include

Research Proposal

Curriculum Vitae

Two reference letters

Degree Transcripts to date

Apply online:

For further information please contact: 


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